description ? with to-3pb package ? complement to type njw0302g applications ? power amplifier applications ? recommended for 100w high fidelity audio frequency amplifier output stage fig.1 simplified outline (to-3pb) and symbol pb free plating product NJW0281G 150 watt silicon epitaxial planar npn power transistor pb b c e NJW0281G ? 1995 thinki semiconductor co., ltd. http://www.thinkisemi.com.tw/ page 1/4 rev.08t parameter symbol rating unit collector to base voltage v cbo collector to emitter voltage v ceo emitter to base voltage v ebo collector current - continuous i c peak collector current i cp base current i b collector power dissipation p c(tc=25 ) 150 w junction temperature t j 150 storage temperature range t stg -55 150 ) absolute maximum ratings ( ta=25 base collector emitter pin description 1 base 2 collector;connected to mounting base 3 emitter 230 v 230 v 5 v 15 a 30 a 1.5 a
? 1995 thinki semiconductor co., ltd. http://www.thinkisemi.com.tw/ page 2/4 rev.08t ) electrical characteristics ( ta = 25 note: , time:60~90sec. 5 , duration:5 0.5sec. cooling speed: 2~10 /sec. time:101 sec temperature profile for dip soldering (pb-free) 1.preheating:25~150 2. peak temp. :255 3. temp. :2705 resistance to soldering heat test conditions parameter symbol test conditions min typ max unit collector to emitter breakdown v oltage v ceo i c =50ma i e =0 230 v collector cut-off current i cbo v cb =230v i e =0 5 a emitter cut-off current i ebo v eb =5.0v i c =0 5 a dc current gain h fe(1) v ce =5.0v i c =1.0a 55 160 h fe(2) v ce =5.0v i c =7.0a 35 60 collector to emitter saturation v oltage v ce(sat) i c =8.0a i b =0.8a 0.4 3.0 v base to emitter voltage v be v ce =5.0v i c =7.0a 1.0 1.5 v transition frequency f t i c =1.0a v ce =5.0v 30 mhz collector output capacitance c ob v cb =10v i e =0 f=1.0mhz 200 pf NJW0281G
? 1995 thinki semiconductor co., ltd. http://www.thinkisemi.com.tw/ page 3/4 rev.08t electrical characteristic curve NJW0281G
p a c k a g e i n f o r m a t i o n s y m b o l d i m e n s i o n s ( m i l l i m e t e r s ) m i n . m a x . a 4 . 6 0 5 . 0 0 a 1 1 . 3 0 1 . 7 0 a 2 2 . 2 0 2 . 6 0 b 0 . 8 0 1 . 2 0 b 1 2 . 9 0 3 . 3 0 b 2 1 . 9 0 2 . 3 0 c 0 . 4 0 0 . 8 0 e 5 . 2 5 5 . 6 5 e 1 5 . 3 1 5 . 7 e 1 1 3 . 2 1 3 . 6 e 2 1 3 . 1 1 3 . 5 e 3 9 . 1 0 9 . 5 0 h 1 9 . 7 2 0 . 1 h 1 1 9 . 1 2 0 . 1 h 2 1 8 . 3 1 8 . 7 h 3 2 . 8 0 3 . 2 0 g 4 . 8 0 5 . 2 0 p 3 . 0 0 3 . 4 0 to-3pb package outline ? 1995 thinki semiconductor co., ltd. http://www.thinkisemi.com.tw/ page 4/4 rev.08t NJW0281G
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